sot223 n-channel enhancement mode vertical dmos fet issue 2 - november 1995 features * low r ds(on) = 1.5 w partmarking detail - zvn4210 absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 100 v continuous drain current at t amb =25c i d 0.8 a pulsed drain current i dm 6a gate-source voltage v gs 20 v power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 100 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 0.8 2.4 v i d =1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 10 100 m a m a v ds =100v, v gs =0 v ds =80v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 2.5 a v ds =25v, v gs =10v static drain-source on-state resistance (1) r ds(on) 1.5 1.8 w w v gs =10v,i d =1.5a v gs =5v,i d =500ma forward transconductance(1)(2) g fs 250 ms v ds =25v,i d =1.5a input capacitance (2) c iss 100 pf common source output capacitance (2) c oss 40 pf v ds =25v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 12 pf turn-on delay time (2)(3) t d(on) 4ns v dd ? 25v, i d =1.5a rise time (2)(3) t r 8ns turn-off delay time (2)(3) t d(off) 20 ns fall time (2)(3) t f 30 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator spice parameter data is available upon request for this device ZVN4210G on-resistance v drain current i d- drain current (amps) rds(on)-drain source on resistance ( w ) 0.1 1.0 10 3.5v 6v v gs =3v 8v 10v 1 100 10 typical characteristics saturation characteristics v ds - drain source voltage (volts) 012345678910 i d - d r a i n c u r r e nt (amps) normalised r ds(on) and v gs(th) v temperature t j -junction temperature (c) normalised r d s ( o n) a nd v g s (th) -50 -25 0 25 50 75 100 150 125 175 200 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 dr a i n- s ourc e r e s i s tan c e r d s( o n ) g ate t h resh o l d v o l t a g e v g s( t h ) i d= 1.5a v gs= 10v i d= 1ma v gs= v ds 2.6 225 7v 5v 4v 6v 8v 9v v gs= 10v 3v v ds -drain source voltage (volts) capacitance v drain-source voltage c- ca pa c ita nce ( pf) 0 20 40 60 80 100 0 120 80 40 160 200 q-charge (nc) v gs - gate so ur ce v o l ta ge ( v olts) gate charge v gate-source voltage 10 8 6 2 0 4 12 14 16 v dd = 20v i d= 1.5a 50v 0 1 2 3456 transconductance v drain current i d(on) - drain current (amps ) g f s -t rans c o n ductance (ms) 0 1 2 0 100 200 400 300 500 345 v ds= 10v 4 1 2 5 3 0 c oss c iss c rss 80v 2v 2.5v 3.5v 5v 600 700 900 800 1000 ZVN4210G d d s g
drain-source diode characteristics parameter symbol min. typ max. unit conditions. diode forward voltage (1) v sd - - 0.79 0.89 - - v v i s =0.32a, v gs =0v i s =1.0a, v gs =0v reverse recovery time (to i r =10%) t rr - 135 ns i f =0.45a, v gs =0v, i r =100ma, v r =10v (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator spice parameter data is available upon request for this device ZVN4210G
sot223 n-channel enhancement mode vertical dmos fet issue 2 - november 1995 features * low r ds(on) = 1.5 w partmarking detail - zvn4210 absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 100 v continuous drain current at t amb =25c i d 0.8 a pulsed drain current i dm 6a gate-source voltage v gs 20 v power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss 100 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 0.8 2.4 v i d =1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 10 100 m a m a v ds =100v, v gs =0 v ds =80v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) 2.5 a v ds =25v, v gs =10v static drain-source on-state resistance (1) r ds(on) 1.5 1.8 w w v gs =10v,i d =1.5a v gs =5v,i d =500ma forward transconductance(1)(2) g fs 250 ms v ds =25v,i d =1.5a input capacitance (2) c iss 100 pf common source output capacitance (2) c oss 40 pf v ds =25v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 12 pf turn-on delay time (2)(3) t d(on) 4ns v dd ? 25v, i d =1.5a rise time (2)(3) t r 8ns turn-off delay time (2)(3) t d(off) 20 ns fall time (2)(3) t f 30 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator spice parameter data is available upon request for this device ZVN4210G on-resistance v drain current i d- drain current (amps) rds(on)-drain source on resistance ( w ) 0.1 1.0 10 3.5v 6v v gs =3v 8v 10v 1 100 10 typical characteristics saturation characteristics v ds - drain source voltage (volts) 012345678910 i d - d r a i n c u r r e nt (amps) normalised r ds(on) and v gs(th) v temperature t j -junction temperature (c) normalised r d s ( o n) a nd v g s (th) -50 -25 0 25 50 75 100 150 125 175 200 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 dr a i n- s ourc e r e s i s tan c e r d s( o n ) g ate t h resh o l d v o l t a g e v g s( t h ) i d= 1.5a v gs= 10v i d= 1ma v gs= v ds 2.6 225 7v 5v 4v 6v 8v 9v v gs= 10v 3v v ds -drain source voltage (volts) capacitance v drain-source voltage c- ca pa c ita nce ( pf) 0 20 40 60 80 100 0 120 80 40 160 200 q-charge (nc) v gs - gate so ur ce v o l ta ge ( v olts) gate charge v gate-source voltage 10 8 6 2 0 4 12 14 16 v dd = 20v i d= 1.5a 50v 0 1 2 3456 transconductance v drain current i d(on) - drain current (amps ) g f s -t rans c o n ductance (ms) 0 1 2 0 100 200 400 300 500 345 v ds= 10v 4 1 2 5 3 0 c oss c iss c rss 80v 2v 2.5v 3.5v 5v 600 700 900 800 1000 ZVN4210G d d s g
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